LOW-TEMPERATURE CMOS-SOS PROCESS USING DRY PRESSURE OXIDATION (P-OX)

被引：0
|
作者：
MARSHALL, S [1 ]
ZETO, RJ [1 ]
KESPERIS, JS [1 ]
机构：
[1] USA,ELECTR TECHNOL & DEVICES LAB,FT MONMOUTH,NJ 07703
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1977年 / 124卷 / 03期
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D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
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页码：C103 / C103
页数：1
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