PREPARATION AND PROPERTIES OF MN-DOPED EPITAXIAL GALLIUM-ARSENIDE

被引：19

作者：

KORDOS, P ^{[1
]}

JANSAK, L ^{[1
]}

BENC, V ^{[1
]}

机构：

[1] SLOVAK ACAD SCI,ELECTROTECH INST,80932 BRATISLAVA,CZECHOSLOVAKIA

来源：

SOLID-STATE ELECTRONICS | 1975年 / 18卷 / 03期

关键词：

D O I：

10.1016/0038-1101(75)90053-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：223 / 226

页数：4

共 13 条

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STASS, ML ;

WOODBURY, DA .

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[2] TRANSPORT AND PHOTOELECTRICAL PROPERTIES OF GALLIUM-ARSENIDE CONTAINING DEEP ACCEPTORS [J].

BROWN, WJ ;

BLAKEMOR.JS .

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[3]

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[4]

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[5] WIDE-RANGE RESISTANCE THERMOMETER MADE FROM MN-DOPED EPITAXIAL GAAS [J].

JANSAK, L ;

KORDOS, P .

CRYOGENICS, 1974, 14 (08) :467-468

[6] MAGNETIC-FIELD AND LOW-TEMPERATURE SENSOR MADE FROM EPITAXIAL GAAS [J].

KORDOS, P ;

JANSAK, L ;

BENC, V .

CRYOGENICS, 1973, 13 (05) :312-314

[7]

KORDOS P, 1972, ELEKTROTECHNICAL I R

[8]

MADELUNG O, 1964, PHYSICS 3-5 COMPOUND

[9]

MEISSNER HG, 1965, Z METALLKD, V56, P523

[10] SILVER-MANGANESE EVAPORATED OHMIC CONTACTS TO P-TYPE GALLIUM ARSENIDE [J].

NUESE, CJ ;

GANNON, JJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (03) :327-&

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