PREPARATION AND PROPERTIES OF MN-DOPED EPITAXIAL GALLIUM-ARSENIDE

被引：19

作者：

KORDOS, P ^{[1
]}

JANSAK, L ^{[1
]}

BENC, V ^{[1
]}

机构：

[1] SLOVAK ACAD SCI,ELECTROTECH INST,80932 BRATISLAVA,CZECHOSLOVAKIA

来源：

SOLID-STATE ELECTRONICS | 1975年 / 18卷 / 03期

关键词：

D O I：

10.1016/0038-1101(75)90053-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：223 / 226

页数：4

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