FAR-FIELD RADIATION-PATTERNS OF MULTIPLE QUANTUM WELL LASERS GROWN BY MO-CVD

被引：8

作者：

HALIDO, D ^{[1
]}

LINDSTROM, C ^{[1
]}

SCIFRES, DR ^{[1
]}

机构：

[1] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304

来源：

ELECTRONICS LETTERS | 1982年 / 18卷 / 18期

关键词：

D O I：

10.1049/el:19820518

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：765 / 767

页数：3

共 12 条

[1] CW ROOM-TEMPERATURE VISIBLE SINGLE QUANTUM WELL GA0.73AL0.27AS DIODE-LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

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SCIFRES, DR ;

STREIFER, W .

ELECTRONICS LETTERS, 1982, 18 (12) :507-509

[2] TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT FOR QUANTUM-WELL ALXGA1-XAS-GAAS HETEROSTRUCTURE LASER-DIODES [J].

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HOLONYAK, N ;

VOJAK, BA ;

HESS, K ;

DUPUIS, RD ;

DAPKUS, PD .

APPLIED PHYSICS LETTERS, 1980, 36 (01) :19-21

[3] CONTINUOUS 300-DEGREES-K LASER OPERATION OF SINGLE-QUANTUM-WELL ALXGA1-XAS-GAAS HETEROSTRUCTURE DIODES GROWN BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION [J].

DUPUIS, RD ;

DAPKUS, PD ;

CHIN, R ;

HOLONYAK, N ;

KIRCHOEFER, SW .

APPLIED PHYSICS LETTERS, 1979, 34 (04) :265-267

[4] CONTINUOUS ROOM-TEMPERATURE MULTIPLE-QUANTUM-WELL ALXGA1-XAS-GAAS INJECTION-LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

DUPUIS, RD ;

DAPKUS, PD ;

HOLONYAK, N ;

KOLBAS, RM .

APPLIED PHYSICS LETTERS, 1979, 35 (07) :487-489

[5] TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT OF GAAS QUANTUM WELL LASERS [J].

DUTTA, NK .

ELECTRONICS LETTERS, 1982, 18 (11) :451-453

[6] QUANTUM-WELL HETEROSTRUCTURE LASERS [J].

HOLONYAK, N ;

KOLBAS, RM ;

DUPUIS, RD ;

DAPKUS, PD .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (02) :170-186

[7]

MANNING J, 1982, SEP SEM LAS C

[8] SHORT-WAVELENGTH CONTINUOUS 300-K PHOTOPUMPED ALXGA1-XAS-GAAS QUANTUM WELL HETEROSTRUCTURE LASER (LAMBDAL GREATER-THAN-OR-EQUAL-TO-7270 A) [J].

MORKOC, H ;

DRUMMOND, TJ ;

CAMRAS, MD ;

HOLONYAK, N .

APPLIED PHYSICS LETTERS, 1982, 40 (01) :18-19

[9] HIGH-POWER COUPLED MULTIPLE STRIPE QUANTUM WELL INJECTION-LASERS [J].

SCIFRES, DR ;

BURNHAM, RD ;

STREIFER, W .

APPLIED PHYSICS LETTERS, 1982, 41 (02) :118-120

[10]

SCIFRES DR, 1981, IEEE J QUANTUM ELECT, V17, P170

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