CARBON IN SILICON - PROPERTIES AND IMPACT ON DEVICES

被引：114

作者：

KOLBESEN, BO ^{[1
]}

MUHLBAUER, A ^{[1
]}

机构：

[1] SIEMENS AG,UNTERNEHMENSBEREICH BAUELEMENTE,SILIZIUMMAT ENTWICKLUNG,D-8000 MUNCHEN 46,FED REP GER

来源：

SOLID-STATE ELECTRONICS | 1982年 / 25卷 / 08期

关键词：

D O I：

10.1016/0038-1101(82)90206-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：759 / 775

页数：17

共 56 条

[1]

ABE T, 1973, SEMICONDUCTOR SILICO, P95

[2] LOWERING OF BREAKDOWN VOLTAGE OF SEMICONDUCTOR SILICON DUE TO PRECIPITATION OF IMPURITY CARBON [J].

AKIYAMA, N ;

YATSURUGI, Y ;

ENDO, Y ;

IMAYOSHI, Z .

APPLIED PHYSICS LETTERS, 1973, 22 (12) :630-631

[3]

Baker J. A., 1969, Semiconductor silicon, P566

[4] EFFECT OF CARBON ON LATTICE PARAMETER OF SILICON [J].

BAKER, JA ;

TUCKER, TN ;

MOYER, NE ;

BUSCHERT, RC .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (09) :4365-&

[5] SOLUBILITY OF CARBON IN PULLED SILICON CRYSTALS [J].

BEAN, AR ;

NEWMAN, RC .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (06) :1211-&

[6]

BERNEWITZ LI, 1973, PHYS STATUS SOLIDI A, V16, P579, DOI 10.1002/pssa.2210160228

[7] THE DISTRIBUTION OF SOLUTE IN CRYSTALS GROWN FROM THE MELT .1. THEORETICAL [J].

BURTON, JA ;

PRIM, RC ;

SLICHTER, WP .

JOURNAL OF CHEMICAL PHYSICS, 1953, 21 (11) :1987-1991

[8]

BURTSCHER J, 1974, SCI PRINCIPLES SEMIC, P36

[9]

CRAVEN RA, 1981, SEMICONDUCTOR SILICO, P254

[10]

De Kock A. J. R., 1980, Handbook on semiconductors. Vol.3. Materials, properties and preparation, P247

← 1 2 3 4 5 6 →