SOME 2ND-PHASE STRUCTURES IN GALLIUM-ARSENIDE ANNEALED AFTER IMPLANTATION WITH ZINC

被引：13

作者：

BENSON, RB ^{[1
]}

LITTLEJOHN, MA ^{[1
]}

PAO, PS ^{[1
]}

SARIN, HK ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,RALEIGH,NC 27607

来源：

APPLIED PHYSICS LETTERS | 1975年 / 27卷 / 02期

关键词：

D O I：

10.1063/1.88369

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：69 / 71

页数：3

共 13 条

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[6]

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[8] INFLUENCE OF IMPLANTATION TEMPERATURE AND SURFACE PROTECTION ON TELLURIUM IMPLANTATION IN GAAS [J].

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MAYER, JW ;

EISEN, FH ;

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WELCH, B ;

PASHLEY, RD .

APPLIED PHYSICS LETTERS, 1972, 21 (12) :601-&

[9] HIGH-VOLTAGE ELECTRON-MICROSCOPY OF INTERFACIAL DEFECTS IN GAAS [J].

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[10]

PAO PS, UNPUBLISHED

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