DRY ETCHING FOR VLSI - A REVIEW

被引：22

作者：

EPHRATH, LM

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1982年 / 129卷 / 03期

关键词：

D O I：

10.1149/1.2123938

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：C62 / C66

页数：5

共 39 条

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[2]

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[5] RADIATION-DAMAGE IN SILICON DIOXIDE FILMS EXPOSED TO REACTIVE ION ETCHING [J].

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[6]

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[8]

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[9]

Ephrath L. M., 1980, International Electron Devices Meeting. Technical Digest, P402

[10] SELECTIVE ETCHING OF SILICON DIOXIDE USING REACTIVE ION ETCHING WITH CF4-H2 [J].

EPHRATH, LM .

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