MECHANISM OF TIN-INDUCED CRYSTALLIZATION IN AMORPHOUS SILICON

被引：11
作者：
Neimash, V. B. [1 ]
Goushcha, A. O. [1 ,2 ]
Shepeliavyi, P. E. [3 ]
Yukhymchuk, V. O. [3 ]
Dan'ko, V. A. [3 ]
Melnyk, V. V. [4 ]
Kuzmich, A. G. [4 ]
机构：
[1] Natl Acad Sci Ukraine, Inst Phys, 46 Nauky Ave, UA-03680 Kiev, Ukraine
[2] NuPortSoft, Aliso Viejo, CA 92656 USA
[3] Natl Acad Sci Ukraine, VE Lashkaryov Inst Semicond Phys, UA-03028 Kiev, Ukraine
[4] Taras Shevchenko Natl Univ Kyiv, Fac Phys, UA-01601 Kiev, Ukraine
来源：
UKRAINIAN JOURNAL OF PHYSICS | 2014年 / 59卷 / 12期
关键词：
silicon; nanocrystals; thin films; metal-induced crystallization; tin; solar cell;
D O I：
10.15407/ujpe59.12.1168
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Formation of Si nanocrystals in amorphous Si-metallic Sn film structures has been studied experimentally, by using the Auger spectroscopy, electron microscopy, and Raman scattering methods. The results are analyzed in comparison with recent results on the crystallization of tin-doped amorphous Si. A mechanism of silicon transformation from the amorphous to the nanocrystalline state in the eutectic layer at the Si-Sn interface is proposed. The mechanism essence consists in a cyclic repetition of the processes of formation and decay of the Si-Sn solution. The application aspect of this mechanism for the fabrication of nanosilicon films used in solar cells is discussed.
引用
收藏
页码：1168 / 1176
页数：9
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