EFFECTS OF POSTDEPOSITION ANNEALING ON THE ELECTRICAL-PROPERTIES AND RELIABILITY OF ULTRATHIN CHEMICAL-VAPOR-DEPOSITED TA2O5 FILMS

被引：13

作者：

HAN, LK ^{[1
]}

YOON, GW ^{[1
]}

KWONG, DL ^{[1
]}

MATHEWS, VK ^{[1
]}

FAZAN, PC ^{[1
]}

机构：

[1] MICRON TECHNOL INC,BOISE,ID 83706

来源：

IEEE ELECTRON DEVICE LETTERS | 1994年 / 15卷 / 08期

关键词：

D O I：

10.1109/55.296216

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports the effects of post-deposition rapid thermal annealing on the electrical characteristics of chemical vapor deposited (CVD) Ta2O5 (approximately 10 nm) on NH3-nitrided polycrystalline silicon (poly-Si) storage electrodes for stacked DRAM applications. Three different post-deposition annealing conditions are compared: a) 800-degrees-C rapid thermal O2 annealing (RTO) for 20 sec followed by rapid thermal N2 annealing (RTA) for 40 sec, b) 800-degrees-C RTO for 60 sec and c) 900-degrees-C RTO for 60 sec. Results show that an increase in RTO temperature and time decreases leakage current at the cost of capacitance. However, over-reoxidation induces thicker oxynitride formation at the Ta2O5/poly-Si interface, resulting in the worst time-dependent dielectric breakdown (TDDB) characteristics.

引用

页码：280 / 282

页数：3

共 13 条

[1]

Fazan P. C., 1992, International Electron Devices Meeting 1992. Technical Digest (Cat. No.92CH3211-0), P263, DOI 10.1109/IEDM.1992.307356

[2] TANTALUM OXIDE THIN-FILMS FOR DIELECTRIC APPLICATIONS BY LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION - PHYSICAL AND ELECTRICAL-PROPERTIES [J].

HITCHENS, WR ;

KRUSELL, WC ;

DOBKIN, DM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1993, 140 (09) :2615-2621

[3] ULTRATHIN TANTALUM OXIDE CAPACITOR DIELECTRIC LAYERS FABRICATED USING RAPID THERMAL NITRIDATION PRIOR TO LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION [J].

KAMIYAMA, S ;

LESAICHERRE, PY ;

SUZUKI, H ;

SAKAI, A ;

NISHIYAMA, I ;

ISHITANI, A .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1993, 140 (06) :1617-1625

[4]

Kamiyama S., 1991, International Electron Devices Meeting 1991. Technical Digest (Cat. No.91CH3075-9), P827, DOI 10.1109/IEDM.1991.235297

[5]

Kamiyama S., 1993, International Electron Devices Meeting 1993. Technical Digest (Cat. No.93CH3361-3), P49, DOI 10.1109/IEDM.1993.347401

[6]

Kwon K. W., 1993, International Electron Devices Meeting 1993. Technical Digest (Cat. No.93CH3361-3), P53, DOI 10.1109/IEDM.1993.347400

[7]

Numasawa Y., 1989, International Electron Devices Meeting 1989. Technical Digest (Cat. No.89CH2637-7), P43, DOI 10.1109/IEDM.1989.74224

[8]

Sagara K., 1992, S VLSI, P10

[9]

Saitoh M., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P680

[10] OXIDIZED TA2O5/SI3N4 DIELECTRIC FILMS ON POLYCRYSTALLINE SI FOR DRAMS [J].

SHINRIKI, H ;

NISHIOKA, Y ;

OHJI, Y ;

MUKAI, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (02) :328-332

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