CAMP-6, A DEEP-UV POSITIVE TONE RESIST APPLIED TO E-BEAM EXPOSURE

被引：2

作者：

HINTERMAIER, M

ANZINGER, H

KNAPEK, E

机构：

[1] Siemens AG, Corporate Research, D-81739 München

[2] OCG, Microelectronics Materials GmbH, D-81677 München

来源：

MICROELECTRONIC ENGINEERING | 1994年 / 23卷 / 1-4期

关键词：

Chemical reactions - Electron beam lithography - Infrared spectroscopy - Microstructure - Polystyrenes - Radiation effects - Thermal effects - Ultraviolet radiation;

D O I：

10.1016/0167-9317(94)90159-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The e-beam response of a positive chemically amplified resist for deep-UV lithography (CAMP 6) based on the ''base cleavage mechanism'' is shown. The change in resist sensitivity and the percentage of t-boc removal as a function of softbake and post exposure bake temperature are investigated. A process is developed to pattern line/space features and isolated line features with nearly straight wall profiles down to sub-quarter microns or, depending on exposure dose, lift off profiles, The effect of the delay time between exposure and post exposure bake on the sensitivity over a range of 24 hours can be neglected with the proposed process.

引用

页码：295 / 298

页数：4