OXIDATION-KINETICS OF REACTION-SINTERED SILICON-CARBIDE

被引：6

作者：

CHAKRABARTI, OP

MUKERJI, J

机构：

[1] Central Glass and Ceramic Research Institute, Jadavpur, Calcutta

来源：

BULLETIN OF MATERIALS SCIENCE | 1993年 / 16卷 / 04期

关键词：

OXIDATION; SILICON CARBIDE;

D O I：

10.1007/BF02746043

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The oxidation kinetics of reaction-sintered silicon carbide has been studied over the temperature range 1200-degrees to 1350-degrees-C. The material has a bulk density of 3.00 g/cm3 and the unreacted Si content is 22.5% (v/v). The activation energy for oxidation is 28.75 +/- 2.61 kcal/mol. It is proposed that the diffusion of oxygen through the growing oxide film is the rate-controlling process.

引用

页码：325 / 329

页数：5

共 13 条

[1] OXIDATION OF SILICON CARBIDE IN THE TEMPERATURE RANGE 1200-DEGREES TO 1500-DEGREES [J].