OXIDATION-KINETICS OF REACTION-SINTERED SILICON-CARBIDE

被引：6
|
作者：
CHAKRABARTI, OP
MUKERJI, J
机构：
[1] Central Glass and Ceramic Research Institute, Jadavpur, Calcutta
来源：
BULLETIN OF MATERIALS SCIENCE | 1993年 / 16卷 / 04期
关键词：
OXIDATION; SILICON CARBIDE;
D O I：
10.1007/BF02746043
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The oxidation kinetics of reaction-sintered silicon carbide has been studied over the temperature range 1200-degrees to 1350-degrees-C. The material has a bulk density of 3.00 g/cm3 and the unreacted Si content is 22.5% (v/v). The activation energy for oxidation is 28.75 +/- 2.61 kcal/mol. It is proposed that the diffusion of oxygen through the growing oxide film is the rate-controlling process.
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页码：325 / 329
页数：5
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