LATTICE-MISMATCHED HETEROEPITAXIAL INTERFACE OF GAASYSB1-Y ON GAAS SUBSTRATES

被引：4
作者：
CHENG, H [1 ]
KOYANAGI, T [1 ]
MILNES, AG [1 ]
机构：
[1] CARNEGIE MELLON UNIV,PITTSBURGH,PA 15213
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 02期
关键词：
D O I：
10.1116/1.583418
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：528 / 531
页数：4
相关论文
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