THE STUDY OF RELAXATION IN ASYMMETRICALLY STRAINED SI1-XGEX/SI SUPERLATTICES

被引：7

作者：

PROKES, SM ^{[1
]}

GLEMBOCKI, OJ ^{[1
]}

TWIGG, ME ^{[1
]}

WANG, KL ^{[1
]}

机构：

[1] UNIV CALIF LOS ANGELES,DEPT ELECT ENGN,LOS ANGELES,CA 90024

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1991年 / 20卷 / 05期

关键词：

RELAXATION; INTERDIFFUSION; STRAINED; SUPERLATTICES;

D O I：

10.1007/BF02670889

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Asymmetrically strained Si/SiGe superlattices consisting of 12 nm Si/4 nm Si0.65Ge0.35 have been grown in Si(001) by molecular beam epitaxy (MBE) and studied as a function of thermal treatments. Results indicate that initially, the interdiffusion is very rapid and non-linear, and at later annealing stages a steady-state interdiffusion is attained. Raman spectroscopy has been used to determine the Ge content and the strain independently, and to show that in the very early annealing stages, strain relaxation occurs predominantly by interdiffusion. This is supported by transmission electron microscopy (TEM) which indicates that less than 10% of the initial strain relaxation is caused by dislocation formation. In addition, a low temperature relaxation has been observed which may be related to misoriented SiGe crystallites at the superlattice/substrate interface, and increased in size with annealing at 631-degrees-C.

引用

页码：389 / 394

页数：6

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