DIFFUSION OF HYDROGEN IN LOW-PRESSURE CHEMICAL VAPOR-DEPOSITED SILICON-NITRIDE FILMS

被引：46
|
作者：
BIK, WMA [1 ]
LINSSEN, RNH [1 ]
HABRAKEN, FHPM [1 ]
VANDERWEG, WF [1 ]
KUIPER, AET [1 ]
机构：
[1] PHILIPS RES LABS,5600 JA EINDHOVEN,NETHERLANDS
来源：
APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 25期
关键词：
D O I：
10.1063/1.103261
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Hydrogen transport in low-pressure chemical vapor deposited Si 3N4 has been investigated using samples consisting of a double layer of hydrogenated and deuterated nitride films. Concentration depth profiles of hydrogen and deuterium were measured using elastic recoil detection. Diffusion coefficients for D were derived from the deuterium concentration depth profiles before and after annealing at temperatures in the range 700-1000°C. The diffusion coefficient is characterized by an activation energy of 2.94 eV for the entire temperature range. Its value varies between 10-17 cm2/s at 700°C and 5×10-14 cm2/s at 1000°C.
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收藏
页码：2530 / 2532
页数：3
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