DIFFUSION OF ZN ACCEPTORS DURING MOVPE OF INP

被引：32
作者：
GLADE, M [1 ]
HERGETH, J [1 ]
GRUTZMACHER, D [1 ]
MASSELI, K [1 ]
BALK, P [1 ]
机构：
[1] GESAMTHSCH KASSEL,W-3500 KASSEL,GERMANY
来源：
JOURNAL OF CRYSTAL GROWTH | 1991年 / 108卷 / 3-4期
关键词：
D O I：
10.1016/0022-0248(91)90221-P
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The unitentional diffusion of Zn acceptors was investigated during low pressure metalorganic vapour phase epitaxy (MOVPE) of InP at 550 and 640-degrees-C using trimethylindium (TMIn), phosphine (PH3) and diethylzinc (DEZ) as precursors. Comparison of hole concentrations obtained with a polaron etch profiler with Zn profiles obtained by secondary ion mass spectroscopy (SIMS) indicate a low level of compensation, i.e. a small ratio of interstitials to substitutionals. The data fit a model where diffusion takes place via Zn interstitials. The small concentration of these interstitials in samples doped during growth explains the lower (by 2 to 3 orders of magnitude) diffusion constant compared to that observed during intentional doping by indiffusion.
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页码：449 / 454
页数：6
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