HIGH-EFFICIENCY (GREATER-THAN 20-PERCENT-AMO) GAAS SOLAR-CELLS GROWN ON INACTIVE-GE SUBSTRATES

被引：46

作者：

ILES, PA

YEH, YCM

HO, FH

CHU, CL

CHENG, C

机构：

[1] Applied Solar Energy Corporation, City of Industry

来源：

IEEE ELECTRON DEVICE LETTERS | 1990年 / 11卷 / 04期

关键词：

D O I：

10.1109/55.61775

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

To provide high-efficiency, large-area, and lighter solar cells, gallium-arsenide (GaAs) cells have been grown on Ge substrates. The growth conditions used for several years of development of GaAs/Ge cells made the GaAs/Ge interface active, and this led to reports of erroneously high efficiencies, and to several operating problems. Here we report results showing successful formation of high-efficiency GaAs cells (over 20%, air mass zero (AMO)) grown on inactive-Ge substrates under production conditions. The growth conditions varied considerably from those previously considered essential for good-quality heteroepitaxial growth. This work opens the way for near-future implementation of large-area, lightweight, high-efficiency solar cells on spacecraft arrays. © 1990 IEEE

引用

页码：140 / 142

页数：3

共 16 条

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