共 50 条
- [41] CHARACTERIZATION OF LOW-PRESSURE CHEMICAL VAPOR DEPOSITED AND THERMALLY GROWN SILICON NITRIDE FILMS.1600, (53):Habraken, F.H.P.M.Kuiper, A.E.T.v. Oostrom, A.Tamminga, Y.
- [42] LOADING EFFECTS ON KINETIC AND ELECTRICAL ASPECTS OF SILANE-REDUCED LOW-PRESSURE CHEMICAL VAPOR-DEPOSITED SELECTIVE TUNGSTENJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1993, 140 (03) : 818 - 825HOLLEMAN, JHASPER, AKLEIJN, CR
- [43] X-RAY-DIFFRACTION PROFILE STUDY IN SILVER FILMS VAPOR-DEPOSITED ON A ROTATING SUBSTRATE WITH AXIAL CENTER AT 44 DEGREES TO VAPOR DIRECTIONJOURNAL OF PHYSICS D-APPLIED PHYSICS, 1977, 10 (10) : L139 - L142SEN, SHALDER, SKGUPTA, SPS
- [44] FILM STRESS-RELATED VACANCY SUPERSATURATION IN SILICON UNDER LOW-PRESSURE CHEMICAL VAPOR-DEPOSITED SILICON-NITRIDE FILMSJOURNAL OF APPLIED PHYSICS, 1988, 64 (10) : 4914 - 4919AHN, STKENNEL, HWPLUMMER, JDTILLER, WA
- [45] Modelling boron diffusion in heavily implanted low-pressure chemical vapor deposited silicon thin films during thermal post-implantation annealingTHIN SOLID FILMS, 2009, 517 (06) : 1961 - 1966Abadli, SalahMansour, Farida
- [47] STRUCTURE AND CRYSTALLIZATION OF LOW-PRESSURE CHEMICAL VAPOR-DEPOSITED SILICON FILMS USING SI2H6 GASJOURNAL OF APPLIED PHYSICS, 1992, 71 (11) : 5427 - 5432HONG, CHPARK, CYKIM, HJ
- [48] CURRENT-VOLTAGE CHARACTERISTICS OF NORMAL-AMORPHOUS LOW-PRESSURE CHEMICAL VAPOR-DEPOSITED SILICON FILMS ON PARA-CRYSTALLINE SILICONJOURNAL OF APPLIED PHYSICS, 1989, 66 (12) : 5894 - 5900DU, NSALKALACHEN, SYAO, JFROELICH, HRJOHN, PKTONG, BYWONG, SK
- [49] INFLUENCE OF DEPOSITION PRESSURE ON THE OUTPUT CHARACTERISTICS OF LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITED POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORSAPPLIED PHYSICS LETTERS, 1993, 63 (07) : 943 - 945DIMITRIADIS, CACOXON, PAECONOMOU, NA
- [50] STUDY OF THE LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITED TUNGSTEN-SILICON INTERFACE - INTERFACIAL FLUORINEJOURNAL OF APPLIED PHYSICS, 1989, 65 (06) : 2313 - 2320CARLISLE, JACHOPRA, DRDILLINGHAM, TRGNADE, BSMITH, G