OPTIMIZATION OF A MOSE2 THIN-FILM DEPOSITION TECHNIQUE

被引：19

作者：

BERNEDE, JC

MALLOUKY, A

POUZET, J

机构：

来源：

MATERIALS CHEMISTRY AND PHYSICS | 1988年 / 20卷 / 03期

关键词：

D O I：

10.1016/0254-0584(88)90061-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：201 / 214

页数：14

共 20 条

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[14] SILICIDE FORMATION IN THIN CO-SPUTTERED (TITANIUM + SILICON) FILMS ON POLYCRYSTALLINE SILICON AND SIO2 [J].

MURARKA, SP ;

FRASER, DB .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) :350-356

[15] SILICIDE FORMATION IN THIN COSPUTTERED (TANTALUM + SILICON) FILMS ON POLYCRYSTALLINE SILICON AND SIO2 [J].

MURARKA, SP ;

FRASER, DB .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (03) :1593-1598

[16]

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[17] FORMATION OF VANADIUM SILICIDES AT THIN-FILM INTERFACES [J].

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TESTARDI, LR .

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[18] PHOTOINDUCED LAYER PHENOMENON CAUSED BY IODINE FORMATION IN MOSE2 - ELECTROLYTE (IODIDE) JUNCTIONS [J].

TRIBUTSCH, H ;

SAKATA, T ;

KAWAI, T .

ELECTROCHIMICA ACTA, 1981, 26 (01) :21-31

[19] ELECTROCHEMICAL SOLAR-CELLS BASED ON LAYER-TYPE TRANSITION-METAL COMPOUNDS - PERFORMANCE OF ELECTRODE MATERIAL [J].

TRIBUTSCH, H .

SOLAR ENERGY MATERIALS, 1979, 1 (3-4) :257-269

[20]

Wagner C., 1979, HDB XRAY PHOTOELECTR

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