EFFECTS OF TRANSVERSE TEMPERATURE-FIELD NONUNIFORMITY ON STRESS IN SILICON SHEET GROWTH

被引：11
作者：
MATAGA, PA
HUTCHINSON, JW
CHALMERS, B
BELL, RO
KALEJS, JP
机构：
[1] HARVARD UNIV,DIV APPL SCI,CAMBRIDGE,MA 02138
[2] MOBIL SOLAR ENERGY CORP,WALTHAM,MA 02254
来源：
JOURNAL OF CRYSTAL GROWTH | 1987年 / 82卷 / 1-2期
关键词：
D O I：
10.1016/0022-0248(87)90164-3
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：60 / 64
页数：5
相关论文
共 7 条
  • [1] KALEJS JP, 1983, DOEJPL9563128304 Q P
  • [2] KALEJS JP, 1984, DOEJPL9563128409 Q P
  • [3] PLASTIC-DEFORMATION INFLUENCE ON STRESS GENERATED DURING SILICON SHEET GROWTH AT HIGH SPEEDS
    LAMBROPOULOS, JC
    HUTCHINSON, JW
    BELL, RO
    CHALMERS, B
    KALEJS, JP
    [J]. JOURNAL OF CRYSTAL GROWTH, 1983, 65 (1-3) : 324 - 330
  • [4] MORRISON AD, 1976, DOEJPL954355763 ANN
  • [5] SILICON RIBBON GROWTH BY THE DENDRITIC WEB PROCESS
    SEIDENSTICKER, RG
    HOPKINS, RH
    [J]. JOURNAL OF CRYSTAL GROWTH, 1980, 50 (01) : 221 - 235
  • [6] WORK-HARDENING AND DYNAMICAL RECOVERY IN SILICON AND GERMANIUM AT HIGH-TEMPERATURES AND COMPARISON WITH FCC METALS
    SIETHOFF, H
    SCHROTER, W
    [J]. SCRIPTA METALLURGICA, 1983, 17 (03): : 393 - 398
  • [7] UTKU S, IN PRESS COMPUTERS S
1