共 50 条
- [1] INITIAL-STAGES OF INTERFACE FORMATION IN GROUP IV-IV HETEROSTRUCTURES - SN ON GE(100)C2X4 AND GE(111)C2X8 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03): : 998 - 999
- [2] INITIAL-STAGES OF GE/GAAS(100) INTERFACE FORMATION PHYSICAL REVIEW B, 1994, 49 (07): : 4775 - 4779
- [3] MOLECULAR-BEAM EPITAXY AND RECONSTRUCTED SURFACES - INITIAL-STAGES OF INTERFACE FORMATION IN GROUP IV-IV STRUCTURES APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1985, 38 (03): : 171 - 179
- [4] MOLECULAR BEAM EPITAXY AND RECONSTRUCTED SURFACES: INITIAL STAGES OF INTERFACE FORMATION IN GROUP IV-IV STRUCTURES. Applied Physics A: Solids and Surfaces, 1985, A38 (03): : 171 - 179
- [6] A STUDY OF INITIAL-STAGES OF GROWTH GE LAYERS ON THE SURFACE (100) GAAS RADIOTEKHNIKA I ELEKTRONIKA, 1991, 36 (06): : 1182 - 1186
- [7] STRUCTURAL AND ELECTRONIC-PROPERTIES DURING THE INITIAL-STAGES OF GE-GAAS(110) INTERFACE FORMATION PHYSICAL REVIEW B, 1995, 51 (20): : 14470 - 14478
- [9] Chemisorption of group-III metals on the (111) surface of group-IV semiconductors: In/Ge(111) Physical Review B: Condensed Matter, 53 (03):
- [10] Chemisorption of group-III metals on the (111) surface of group-IV semiconductors: In/Ge(111) PHYSICAL REVIEW B, 1996, 53 (03): : 1539 - 1547