AUGER LIFETIMES FOR EXCITONS BOUND TO DEEP IMPURITIES IN SEMICONDUCTORS

被引：5

作者：

JAROS, M

RIDDOCH, FA

DALIAN, L

机构：

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1983年 / 16卷 / 21期

关键词：

D O I：

10.1088/0022-3719/16/21/001

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：L733 / L739

页数：7

共 20 条

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