AUGER LIFETIMES FOR EXCITONS BOUND TO DEEP IMPURITIES IN SEMICONDUCTORS

[1] OPTICAL CROSS-SECTIONS ASSOCIATED WITH DEEP LEVELS IN SEMICONDUCTORS .1. [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1980, 13 (33): : 6167 - 6180

[2] BARAFF GA, 1980, DEFECTS RAD EFFECTS, P287

[3] Bergh A., 1976, LIGHT EMITTING DIODE

[4] RADIATIONLESS RECOMBINATION IN PHOSPHORS [J]. PHYSICAL REVIEW, 1958, 111 (01): : 129 - 132

[5] CALCULATION OF THE ZERO-TEMPERATURE AUGER RECOMBINATION RATE IN THE QUATERNARY SEMICONDUCTOR ALLOY GAALASSB [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1981, 14 (22): : 3269 - 3278

[6] AUGER ELECTRON CONDUCTIVITY IN SILICON .2. [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (02) : 747 - &

[7] AUGER COEFFICIENTS FOR HIGHLY DOPED AND HIGHLY EXCITED SILICON [J]. APPLIED PHYSICS LETTERS, 1977, 31 (05) : 346 - 348

[8] ELECTRON-CAPTURE LUMINESCENCE IN GAP-O REVISITED [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1981, 14 (10): : 1507 - 1518

[9] CASE FOR LARGE AUGER RECOMBINATION CROSS-SECTIONS ASSOCIATED WITH DEEP CENTERS IN SEMICONDUCTORS [J]. SOLID STATE COMMUNICATIONS, 1978, 25 (12) : 1071 - 1074

[10] WAVE-FUNCTIONS AND OPTICAL CROSS-SECTIONS ASSOCIATED WITH DEEP CENTERS IN SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1977, 16 (08): : 3694 - 3706

[1] OPTICAL CROSS-SECTIONS ASSOCIATED WITH DEEP LEVELS IN SEMICONDUCTORS .1. [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1980, 13 (33): : 6167 - 6180

[2] BARAFF GA, 1980, DEFECTS RAD EFFECTS, P287

[3] Bergh A., 1976, LIGHT EMITTING DIODE

[4] RADIATIONLESS RECOMBINATION IN PHOSPHORS [J]. PHYSICAL REVIEW, 1958, 111 (01): : 129 - 132

[5] CALCULATION OF THE ZERO-TEMPERATURE AUGER RECOMBINATION RATE IN THE QUATERNARY SEMICONDUCTOR ALLOY GAALASSB [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1981, 14 (22): : 3269 - 3278

[6] AUGER ELECTRON CONDUCTIVITY IN SILICON .2. [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (02) : 747 - &

[7] AUGER COEFFICIENTS FOR HIGHLY DOPED AND HIGHLY EXCITED SILICON [J]. APPLIED PHYSICS LETTERS, 1977, 31 (05) : 346 - 348

[8] ELECTRON-CAPTURE LUMINESCENCE IN GAP-O REVISITED [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1981, 14 (10): : 1507 - 1518

[9] CASE FOR LARGE AUGER RECOMBINATION CROSS-SECTIONS ASSOCIATED WITH DEEP CENTERS IN SEMICONDUCTORS [J]. SOLID STATE COMMUNICATIONS, 1978, 25 (12) : 1071 - 1074

[10] WAVE-FUNCTIONS AND OPTICAL CROSS-SECTIONS ASSOCIATED WITH DEEP CENTERS IN SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1977, 16 (08): : 3694 - 3706