ION-BEAM MODIFICATION OF ISFET MEMBRANES FOR COPPER-ION DETECTION

被引：5

作者：

HULLER, J ^{[1
]}

PHAM, MT ^{[1
]}

VOPEL, T ^{[1
]}

ALBRECHT, J ^{[1
]}

机构：

[1] ANGEW FESTKORPERANALYT GMBH,INST FRESENIUS,D-01109 DRESDEN,GERMANY

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 1995年 / 24卷 / 1-3期

关键词：

COPPER; ION-BEAM MODIFICATION; ISFETS;

D O I：

10.1016/0925-4005(95)85048-1

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

The sensibilization of a silicon-insulator system for Cu2+ ion measurement is reported. This aim is realized by (i) coupling of sputtered arsenic selenide (As2Se3) layers to the insulator top layer and (ii) direct ion implantation of As, Se and Cu into the SiO2 matrix. Conditions for the arsenic selenide ion-beam synthesis have been elaborated, consisting of alternating implantation at different energies and thermal treatment with short time pulses. Cu2+ sensitivities near the theoretical value of 30 mV pCu(-1) have been measured between pCu=1 and pCu=5.

引用

页码：225 / 227

页数：3

共 8 条

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