MOLECULAR-BEAM EPITAXY OF GAAS AND ALGAAS ON SI

被引:53
作者
TSAUR, BY
METZE, GM
机构
关键词
D O I
10.1063/1.95305
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:535 / 536
页数:2
相关论文
共 4 条
[1]  
CHANG LL, 1975, EPITAXIAL GROWTH A
[2]   GAAS SHALLOW-HOMOJUNCTION SOLAR-CELLS ON GE-COATED SI SUBSTRATES [J].
GALE, RP ;
FAN, JCC ;
TSAUR, BY ;
TURNER, GW ;
DAVIS, FM .
ELECTRON DEVICE LETTERS, 1981, 2 (07) :169-171
[3]   HETEROEPITAXY OF VACUUM-EVAPORATED GE FILMS ON SINGLE-CRYSTAL SI [J].
TSAUR, BY ;
GEIS, MW ;
FAN, JCC ;
GALE, RP .
APPLIED PHYSICS LETTERS, 1981, 38 (10) :779-781
[4]  
[No title captured]