ANALYSIS OF DISORDER SCATTERING IN GA0.47IN0.53AS USING GAUSSIAN POTENTIAL

被引：10

作者：

HIRAMATSU, K ^{[1
]}

NISHINAGA, T ^{[1
]}

机构：

[1] TOYOHASHI UNIV TECHNOL,SCH ELECT ENGN & ELECTR,TOYOHASHI,AICHI 440,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1983年 / 22卷 / 03期

关键词：

D O I：

10.1143/JJAP.22.504

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：504 / 507

页数：4

共 11 条

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[8] IMPROVED BROOKS MOBILITY FORMULA FOR DISORDER SCATTERING IN SEMICONDUCTOR ALLOYS [J].

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[9] LIQUID-PHASE EPITAXIAL-GROWTH AND CHARACTERIZATION OF HIGH-PURITY LATTICE MATCHED GAXIN1-XAS ON LESS-THAN111 GREATER-THAN-B INP [J].

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