DEEP ELECTRON TRAPPING CENTER IN SI-DOPED INGAAIP GROWN BY MOLECULAR-BEAM EPITAXY

被引：71
作者：
NOJIMA, S
TANAKA, H
ASAHI, H
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 10期
关键词：
D O I：
10.1063/1.336819
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：3489 / 3494
页数：6
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