SURFACE-MORPHOLOGY OF GAAS GROWN BY GAS-SOURCE MBE USING TRIMETHYLGALLIUM AND ARSENIC

被引：11
作者：
ISHIKAWA, H
KONDO, K
SASA, S
TANAKA, H
HIYAMIZU, S
机构：
来源：
JOURNAL OF CRYSTAL GROWTH | 1986年 / 76卷 / 02期
关键词：
D O I：
10.1016/0022-0248(86)90404-5
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：521 / 524
页数：4
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