COMMENT ON THE MEASUREMENT OF BANDGAP NARROWING FROM THE MINORITY-CARRIER CURRENT IN HEAVILY-DOPED EMITTERS

被引：3

作者：

DURAN, RS

VANVLIET, CM

机构：

[1] Department of Electrical and Computer Engineering, Florida International University, Miami, University Park Campus

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1993年 / 138卷 / 01期

关键词：

D O I：

10.1002/pssa.2211380147

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

[No abstract available]

引用

页码：K63 / K65

页数：3

共 50 条

[21] MEASUREMENT OF TRANSPORT PARAMETERS IN HEAVILY-DOPED EMITTERS OF BIPOLAR-TRANSISTORS
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