COMMENT ON THE MEASUREMENT OF BANDGAP NARROWING FROM THE MINORITY-CARRIER CURRENT IN HEAVILY-DOPED EMITTERS

被引：3

作者：

DURAN, RS

VANVLIET, CM

机构：

[1] Department of Electrical and Computer Engineering, Florida International University, Miami, University Park Campus

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1993年 / 138卷 / 01期

关键词：

D O I：

10.1002/pssa.2211380147

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

[No abstract available]

引用

页码：K63 / K65

页数：3

共 8 条

[1] UNIFIED APPARENT BANDGAP NARROWING IN NORMAL-TYPE AND PARA-TYPE SILICON [J].

KLAASSEN, DBM ;

SLOTBOOM, JW ;

DEGRAAFF, HC .

SOLID-STATE ELECTRONICS, 1992, 35 (02) :125-129

[2] ELECTRICAL-CURRENT AND CARRIER DENSITY IN DEGENERATE MATERIALS WITH NONUNIFORM BAND-STRUCTURE [J].

MARSHAK, AH ;

VANVLIET, CM .

PROCEEDINGS OF THE IEEE, 1984, 72 (02) :148-164

[3] ELECTRICAL CURRENT IN SOLIDS WITH POSITION-DEPENDENT BAND-STRUCTURE [J].

MARSHAK, AH ;

VANVLIET, KM .

SOLID-STATE ELECTRONICS, 1978, 21 (02) :417-427

[4] CARRIER DENSITIES AND EMITTER EFFICIENCY IN DEGENERATE MATERIALS WITH POSITION-DEPENDENT BAND-STRUCTURE [J].

MARSHAK, AH ;

VANVLIET, KM .

SOLID-STATE ELECTRONICS, 1978, 21 (02) :429-434

[5]

Roulston D.J., 1990, BIPOLAR SEMICONDUCTO

[6] A NEW SIMPLE ANALYTICAL EMITTER MODEL FOR BIPOLAR-TRANSISTORS [J].

SELVAKUMAR, CR ;

ROULSTON, DJ .

SOLID-STATE ELECTRONICS, 1987, 30 (07) :723-728

[7] SIMPLE GENERAL ANALYTICAL SOLUTION TO THE MINORITY-CARRIER TRANSPORT IN HEAVILY DOPED SEMICONDUCTORS [J].

SELVAKUMAR, CR .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (12) :3476-3478

[8]

VANVLIET CM, 1993, IN PRESS IEEE T ELEC, V40

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