HIGH-SENSITIVITY OF VPE-GROWN INGAAS/INP-HETEROSTRUCTURE APD WITH BUFFER LAYER AND GUARD-RING STRUCTURE

被引：24
作者：
MATSUSHIMA, Y
NODA, Y
KUSHIRO, Y
SEKI, N
AKIBA, S
机构：
来源：
ELECTRONICS LETTERS | 1984年 / 20卷 / 06期
关键词：
D O I：
10.1049/el:19840158
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：235 / 236
页数：2
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