DIRECT OBSERVATION OF ALXGA1-XAS/GAAS SUPERLATTICES BY REM

被引：8
|
作者：
YAMAMOTO, N [1 ]
MUTO, S [1 ]
机构：
[1] FUJITSU LTD,ATSUGI 24310,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1984年 / 23卷 / 10期
关键词：
MICROSCOPES; ELECTRON - Applications - SEMICONDUCTING GALLIUM ARSENIDE;
D O I：
10.1143/JJAP.23.L806
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Cleavage surface of Al//xGa//1// minus //xAs/GaAs superlattices were observed by reflection electron microscopy using a conventional transmission electron microscopy, and cross sections of the superlattices were clearly shown as stripe patterns. Strain fields around the superlattice were revealed in a REM image. The irregularities in superlattice layers caused by roughness of a substrate surface were found to be relaxed in successive layers.
引用
收藏
页码：L806 / L808
页数：3
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