EMBEDDED-STRIPE GAAS-GAALAS DOUBLE-HETEROSTRUCTURE LASERS WITH POLYCRYSTALLINE GAASP LAYERS .2. LASERS WITH ETCHED MIRRORS

被引：14

作者：

ITOH, K ^{[1
]}

ASAHI, K ^{[1
]}

INOUE, M ^{[1
]}

TERAMOTO, I ^{[1
]}

机构：

[1] MATSUSHITA ELECTR CORP, RES LAB, TAKATSUKI, OSAKA, JAPAN

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1977年 / 13卷 / 08期

关键词：

D O I：

10.1109/JQE.1977.1069406

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：628 / 631

页数：4

共 10 条

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[2] INTEGRATED GAAS-ALGAAS DOUBLE-HETEROSTRUCTURE LASERS [J].

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APPLIED PHYSICS LETTERS, 1975, 27 (04) :241-243

[3] EMBEDDED-STRIPE GAAS-GAALAS DOUBLE-HETEROSTRUCTURE LASERS WITH POLYCRYSTALLINE GAASP LAYERS .1. LASERS WITH CLEAVED MIRRORS [J].

ITOH, K ;

ASAHI, K ;

INOUE, M ;

TERAMOTO, I .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1977, 13 (08) :623-627

[4] SELECTIVE ETCHING OF GALLIUM ARSENIDE CRYSTALS IN H2SO4-H2O2-H2O SYSTEM [J].

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MERZ JL, 1976, 1976 TOP M INT OPT S

[6] CW OPERATION OF DISTRIBUTED-FEEDBACK GAAS-GAAIAS DIODE LASERS AT TEMPERATURES UP TO 300-K [J].

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AIKI, K ;

UMEDA, J ;

YARIV, A .

APPLIED PHYSICS LETTERS, 1975, 27 (07) :403-405

[7] INTEGRATED TWIN-GUIDE ALGAAS LASER WITH MULTIHETEROSTRUCTURE [J].

SUEMATSU, Y ;

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HAYASHI, K .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1975, QE11 (07) :457-460

[8]

TARUI Y, 1976, 1975 P C SOL STAT DE, P293

[9] GAAS-GA1-XALXAS BURIED-HETEROSTRUCTURE INJECTION LASERS [J].

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JOURNAL OF APPLIED PHYSICS, 1974, 45 (11) :4899-4906

[10]

WANG S, 1974, IEEE J QUANTUM ELECT, VQE10, P413, DOI 10.1109/JQE.1974.1068152

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