EMBEDDED-STRIPE GAAS-GAALAS DOUBLE-HETEROSTRUCTURE LASERS WITH POLYCRYSTALLINE GAASP LAYERS .2. LASERS WITH ETCHED MIRRORS

被引：14

作者：

ITOH, K ^{[1
]}

ASAHI, K ^{[1
]}

INOUE, M ^{[1
]}

TERAMOTO, I ^{[1
]}

机构：

[1] MATSUSHITA ELECTR CORP, RES LAB, TAKATSUKI, OSAKA, JAPAN

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1977年 / 13卷 / 08期

关键词：

D O I：

10.1109/JQE.1977.1069406

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：628 / 631

页数：4

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[3] EMBEDDED-STRIPE GAAS-GAALAS DOUBLE-HETEROSTRUCTURE LASERS WITH POLYCRYSTALLINE GAASP LAYERS .1. LASERS WITH CLEAVED MIRRORS
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