SUBPICOSECOND CARRIER TRAPPING IN HIGH-DEFECT-DENSITY AMORPHOUS SI AND GAAS

被引：54
作者：
KUHL, J
GOBEL, EO
PFEIFFER, T
JONIETZ, A
机构：
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1984年 / 34卷 / 02期
关键词：
D O I：
10.1007/BF00614761
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：105 / 110
页数：6
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