ELECTRICAL-PROPERTIES OF INDIUM SELENIDE SINGLE-CRYSTALS

被引：66

作者：

DEBLASI, C ^{[1
]}

MICOCCI, G ^{[1
]}

RIZZO, A ^{[1
]}

TEPORE, A ^{[1
]}

机构：

[1] CNR,GRP NAZL MAT,LECCE,ITALY

来源：

PHYSICAL REVIEW B | 1983年 / 27卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.27.2429

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2429 / 2434

页数：6

共 19 条

[1]

ABDINOV AS, 1976, SOV PHYS SEMICOND+, V10, P44

[2]

ABDINOV AS, 1976, SOV PHYS SEMICOND+, V10, P47

[3] THERMAL AND INFRARED QUENCHING OF PHOTOCONDUCTIVITY IN N-INSE SINGLE CRYSTALS [J].

ABDULLAEV, GB ;

ALIEVA, MK ;

MAMEDOVA, AZ .

PHYSICA STATUS SOLIDI, 1968, 25 (01) :75-+

[4] OPTICAL TRANSITIONS IN SPECTRA OF FUNDAMENTAL ABSORPTION AND REFLECTION OF INSE SINGLE CRYSTALS [J].

ANDRIYAS.MV ;

SAKHNOVS.MY ;

TIMOFEEV, VB ;

YAKIMOVA, AS .

PHYSICA STATUS SOLIDI, 1968, 28 (01) :277-&

[5]

Atakishiev S. M., 1969, Physica Status Solidi B, V32, pk33, DOI 10.1002/pssb.19690320160

[6]

CAMASSEL J, 1978, PHYS REV B, V17, P4718, DOI 10.1103/PhysRevB.17.4718

[7] ELECTRICAL AND OPTICAL PROPERTIES OF INDIUM SELENIDE [J].

DAMON, RW ;

REDINGTON, RW .

PHYSICAL REVIEW, 1954, 96 (06) :1498-1500

[8] LARGE INSE SINGLE-CRYSTALS GROWN FROM STOICHIOMETRIC AND NONSTOICHIOMETRIC MELTS [J].

DEBLASI, C ;

MICOCCI, G ;

MONGELLI, S ;

TEPORE, A .

JOURNAL OF CRYSTAL GROWTH, 1982, 57 (03) :482-486

[9]

DEBLASI C, UNPUB

[10] ELECTRONIC PROPERTIES OF LAYER SEMICONDUCTOR INSE [J].

DEPEURSINGE, Y ;

DONI, E ;

GIRLANDA, R ;

BALDERESCHI, A ;

MASCHKE, K .

SOLID STATE COMMUNICATIONS, 1978, 27 (12) :1449-1453

← 1 2 →