HIGH-TEMPERATURE GAAS SINGLE HETEROJUNCTION LASER-DIODES

被引：7
|
作者：
MINDEN, HT [1 ]
PREMO, R [1 ]
机构：
[1] SPERRY RAND CORP,RES CTR,SUDBURY,MA 01776
来源：
JOURNAL OF APPLIED PHYSICS | 1974年 / 45卷 / 10期
关键词：
D O I：
10.1063/1.1663081
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：4520 / 4527
页数：8
相关论文
共 50 条
  • [31] MAPPING OF LOCAL TEMPERATURES ON MIRRORS OF GAAS/ALGAAS LASER-DIODES
    BRUGGER, H
    EPPERLEIN, PW
    APPLIED PHYSICS LETTERS, 1990, 56 (11) : 1049 - 1051
  • [32] ABSORPTION-EDGE EFFECTS ON TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENTS IN GAAS LASER-DIODES
    WINOGRADOFF, NN
    SACILOTTI, MA
    SOLID STATE COMMUNICATIONS, 1977, 22 (08) : 489 - 492
  • [33] EFFECTS OF PROTON-BOMBARDMENT ON PROPERTIES OF GAAS LASER-DIODES
    MINDEN, HT
    JOURNAL OF APPLIED PHYSICS, 1976, 47 (03) : 1090 - 1094
  • [34] SCALING OF GAAS/ALGAAS LASER-DIODES FOR SUBMILLIAMPERE THRESHOLD CURRENT
    MARCLAY, E
    ARENT, DJ
    HARDER, C
    MEIER, HP
    WALTER, W
    WEBB, DJ
    ELECTRONICS LETTERS, 1989, 25 (14) : 892 - 894
  • [35] THERMALLY INDUCED STRESS IN GAAS GAALAS STRIPE LASER-DIODES
    RIMPLER, R
    BOTH, W
    IEE PROCEEDINGS-J OPTOELECTRONICS, 1987, 134 (06): : 323 - 325
  • [36] COMPARISON OF OPERATION OF GAAS SINGLE- AND DOUBLE-HETEROSTRUCTURE LASER-DIODES IN AN EXTERNAL CAVITY
    ROSSI, JA
    STILLMAN, GE
    HSIEH, JJ
    HECKSCHE.H
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (11) : 741 - 741
  • [37] HIGH-RELIABILITY, HIGH-POWER, SINGLE-MODE LASER-DIODES
    WELCH, D
    CRAIG, R
    STREIFER, W
    SCIFRES, D
    ELECTRONICS LETTERS, 1990, 26 (18) : 1481 - 1483
  • [38] SURFACE-MODE COUPLING IN GAAS/ALGAAS LASER-DIODES - A NEW CONCEPT FOR A SINGLE LASER MODE EMISSION
    KOCK, A
    FREISLEBEN, S
    GMACHL, C
    GOLSHANI, A
    GORNIK, E
    KORTE, L
    ROSENBERGER, M
    SOUZA, PL
    SUPERLATTICES AND MICROSTRUCTURES, 1994, 15 (03) : 275 - 279
  • [39] ALGAAS/GAAS DISTRIBUTED FEEDBACK LASER-DIODES GROWN BY MOCVD
    OHATA, T
    HONDA, K
    HIRATA, S
    TAMAMURA, K
    ISHIKAWA, H
    MIYAHARA, K
    MORI, Y
    KOJIMA, C
    JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 637 - 642
  • [40] REDUCTION OF MIRROR TEMPERATURE IN GAAS/ALGAAS QUANTUM-WELL LASER-DIODES WITH SEGMENTED CONTACTS
    HERRMANN, FU
    BEECK, S
    ABSTREITER, G
    HANKE, C
    HOYLER, C
    KORTE, L
    APPLIED PHYSICS LETTERS, 1991, 58 (10) : 1007 - 1009
12345