HIGH-TEMPERATURE GAAS SINGLE HETEROJUNCTION LASER-DIODES

被引：7

作者：

MINDEN, HT ^{[1
]}

PREMO, R ^{[1
]}

机构：

[1] SPERRY RAND CORP,RES CTR,SUDBURY,MA 01776

来源：

JOURNAL OF APPLIED PHYSICS | 1974年 / 45卷 / 10期

关键词：

D O I：

10.1063/1.1663081

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4520 / 4527

页数：8

共 50 条

[1] FAST PULSING OF SINGLE HETEROJUNCTION LASER-DIODES
HULL, DR
NORTON, SJ
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1985, 18 (01) : 19 - 28
[2] HETEROJUNCTION LASER-DIODES FOR ROOM-TEMPERATURE OPERATION
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ETTENBERG, M
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[3] MULTIPLE LAYER (ALGA)AS-GAAS HETEROJUNCTION LASER-DIODES - SYNTHESIS AND MODE CONTROL
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KRESSEL, H
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[4] 15 MW SINGLE-MODE CW OPERATION OF CRANK STRUCTURE TJS']JS LASER-DIODES AT HIGH-TEMPERATURE
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[5] ROOM-TEMPERATURE HETEROJUNCTION LASER-DIODES FROM VAPOR-GROWN IN1-XGAXP/GAAS STRUCTURES
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[6] 1/F NOISE IN DOUBLE-HETEROJUNCTION ALGAAS/GAAS LASER-DIODES ON GAAS AND ON SI-SUBSTRATES
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[7] LOW-THRESHOLD DOUBLE HETEROJUNCTION ALGAAS-GAAS LASER-DIODES - THEORY AND EXPERIMENT
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JOURNAL OF APPLIED PHYSICS, 1976, 47 (08) : 3533 - 3537
[8] VERTICAL AND DIRECT INTEGRATION OF HETEROJUNCTION PHOTOTRANSISTORS AND LASER-DIODES
NODA, S
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[9] DESIGN CURVES FOR DOUBLE-HETEROJUNCTION LASER-DIODES
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[10] SINGLE FREQUENCY AND TUNABLE LASER-DIODES
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