CHARGE TRANSPORT AND TRAPPING IN SILICON NITRIDE SILICON DIOXIDE DIELECTRIC DOUBLE-LAYERS

[1] SILICON-NITRIDE TRAP PROPERTIES AS REVEALED BY CHARGE-CENTROID MEASUREMENTS ON MNOS DEVICES [J]. APPLIED PHYSICS LETTERS, 1975, 26 (03) : 94 - 96

[2] REVIEW OF RECENT EXPERIMENTS PERTAINING TO HOLE TRANSPORT IN SI3N4 [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (08) : 1014 - 1018

[3] TRANSIENT CONDUCTION IN INSULATORS AT HIGH FIELDS [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (12) : 5236 - 5243

[4] CONTACT CURRENTS IN SILICON-NITRIDE [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (05) : 2092 - 2097

[5] INTERPRETATION OF FLAT-BAND VOLTAGE SHIFTS IN TERMS OF CHARGE-DISTRIBUTIONS IN MNOS STRUCTURES [J]. SOLID-STATE ELECTRONICS, 1982, 25 (09) : 843 - 850

[6] PHOTO-IONIZATION CROSS-SECTION OF ELECTRON TRAPS IN SILICON-NITRIDE FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (12) : 7313 - 7316

[7] ELECTRICAL CHARACTERISTICS OF SILICON NITRIDE FILMS PREPARED BY SILANE-AMMONIA REACTION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (09) : 948 - &

[8] CONTI M, 1972, THIN SOLIDS FILMS, V14, P221

[9] TEMPERATURE-DEPENDENCE OF METAL-NITRIDE-OXIDE-SILICON CURRENTS AT CONSTANT OXIDE FIELDS [J]. APPLIED PHYSICS LETTERS, 1980, 37 (10) : 928 - 930

[10] Frenkel J, 1938, PHYS REV, V54, P647, DOI 10.1103/PhysRev.54.647

[1] SILICON-NITRIDE TRAP PROPERTIES AS REVEALED BY CHARGE-CENTROID MEASUREMENTS ON MNOS DEVICES [J]. APPLIED PHYSICS LETTERS, 1975, 26 (03) : 94 - 96

[2] REVIEW OF RECENT EXPERIMENTS PERTAINING TO HOLE TRANSPORT IN SI3N4 [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (08) : 1014 - 1018

[3] TRANSIENT CONDUCTION IN INSULATORS AT HIGH FIELDS [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (12) : 5236 - 5243

[4] CONTACT CURRENTS IN SILICON-NITRIDE [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (05) : 2092 - 2097

[5] INTERPRETATION OF FLAT-BAND VOLTAGE SHIFTS IN TERMS OF CHARGE-DISTRIBUTIONS IN MNOS STRUCTURES [J]. SOLID-STATE ELECTRONICS, 1982, 25 (09) : 843 - 850

[6] PHOTO-IONIZATION CROSS-SECTION OF ELECTRON TRAPS IN SILICON-NITRIDE FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (12) : 7313 - 7316

[7] ELECTRICAL CHARACTERISTICS OF SILICON NITRIDE FILMS PREPARED BY SILANE-AMMONIA REACTION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (09) : 948 - &

[8] CONTI M, 1972, THIN SOLIDS FILMS, V14, P221

[9] TEMPERATURE-DEPENDENCE OF METAL-NITRIDE-OXIDE-SILICON CURRENTS AT CONSTANT OXIDE FIELDS [J]. APPLIED PHYSICS LETTERS, 1980, 37 (10) : 928 - 930

[10] Frenkel J, 1938, PHYS REV, V54, P647, DOI 10.1103/PhysRev.54.647