RESONANT RAMAN EFFECT IN INDIRECT GAP SEMICONDUCTOR GALLIUM PHOSPHIDE

被引：44

作者：

SCOTT, JF

DAMEN, TC

LEITE, RCC

SILFVAST, WT

机构：

[1] Bell Telephone Laboratories, Holmdel, NJ

来源：

SOLID STATE COMMUNICATIONS | 1969年 / 7卷 / 13期

关键词：

D O I：

10.1016/0038-1098(69)90550-X

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Resonant Raman scattering has been oberved in GaP using the CdII 4416Å laser, which is near the direct gap in wavelength. Enhanced cross-sections, increased LO/TO intensity ratios, and LO overtone scattering are observed at resonance. © 1969.

引用

页码：953 / &

共 19 条

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