TEST OF THE PEIERLS-NABARRO MODEL FOR DISLOCATIONS IN SILICON

被引:68
作者
REN, Q
JOOS, B
DUESBERY, MS
机构
[1] UNIV OTTAWA,OTTAWA CARLETON INST PHYS,OTTAWA,ON K1N 6N5,CANADA
[2] FAIRFAX MAT RES INC,ALEXANDRIA,VA 22315
来源
PHYSICAL REVIEW B | 1995年 / 52卷 / 18期
关键词
D O I
10.1103/PhysRevB.52.13223
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We show, using an atomistic model with a Stillinger-Weber potential (SWP), that in the absence of reconstruction, the basic assumption of the Peierls-Nabarro (PN) model that the dislocation core is spread within the glide plane is verified for silicon. The Peierls stress (PS) obtained from the two models are in quantitative agreement (approximate to 0.3 mu), when restoring forces obtained from first principles generalized stacking-fault energy surfaces are used in the PN model [B. Joos, Q. Ren, and M. S. Duesbery, Phys. Rev. B 50, 5890 (1994)]. The PS was found to be isotropic in the glide plane. Within the SWP model no evidence of dissociation in the shuffle dislocations is found bur, glide sets do separate into two partials.
引用
收藏
页码:13223 / 13228
页数:6
相关论文
共 44 条
[1]  
Alexander H., 1985, DISLOCATIONS SOLIDS, P337
[2]  
Alexander H., 1969, SOLID STATE PHYS, V22, P27
[3]  
ALEXANDER H, 1986, DISLOCATIONS SOLIDS, V7, P114
[4]  
AMELINCKX S, 1979, DISLOCATIONS SOLIDS, V2, P294
[5]  
[Anonymous], 1982, THEORY DISLOCATIONS
[6]   INFLUENCE OF SHEAR STRESS ON SCREW DISLOCATIONS IN A MODEL SODIUM LATTICE [J].
BASINSKI, ZS ;
DUESBERY, MS ;
TAYLOR, R .
CANADIAN JOURNAL OF PHYSICS, 1971, 49 (16) :2160-&
[7]   PHASE-DIAGRAM OF SILICON BY MOLECULAR-DYNAMICS [J].
BROUGHTON, JQ ;
LI, XP .
PHYSICAL REVIEW B, 1987, 35 (17) :9120-9127
[8]  
BULATOV V, 1995, PHILOS MAG A, V72, P496
[9]   THE PLASTIC-DEFORMATION OF SILICON BETWEEN 300-DEGREES-C AND 600-DEGREES-C [J].
CASTAING, J ;
VEYSSIERE, P ;
KUBIN, LP ;
RABIER, J .
PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1981, 44 (06) :1407-1413
[10]   DISLOCATIONS AND STACKING FAULTS [J].
CHRISTIA.JW ;
VITEK, V .
REPORTS ON PROGRESS IN PHYSICS, 1970, 33 (04) :307-&