INTRINSIC TRANSCONDUCTANCE EXTRACTION FOR DEEP-SUBMICROMETER MOSFETS

被引：11
|
作者：
CHUNG, J
JENG, MC
MAY, G
KO, PK
HU, C
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 01期
关键词：
D O I：
10.1109/16.21194
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：140 / 142
页数：3
相关论文
共 50 条
  • [1] AN ACCURATE INTRINSIC CAPACITANCE MODELING FOR DEEP-SUBMICROMETER MOSFETS
    CHO, DH
    KANG, SM
    KIM, KH
    LEE, SH
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1995, 42 (03) : 540 - 548
  • [2] INVERTER PERFORMANCE OF DEEP-SUBMICROMETER MOSFETS
    SAIHALASZ, GA
    WORDEMAN, MR
    KERN, DP
    RISHTON, S
    GANIN, E
    NG, HY
    MOY, D
    CHANG, THP
    DENNARD, RH
    IEEE ELECTRON DEVICE LETTERS, 1988, 9 (12) : 633 - 635
  • [3] RANDOM TELEGRAPH NOISE OF DEEP-SUBMICROMETER MOSFETS
    HUNG, KK
    KO, PK
    HU, CM
    CHENG, YC
    IEEE ELECTRON DEVICE LETTERS, 1990, 11 (02) : 90 - 92
  • [4] THRESHOLD VOLTAGE MODEL FOR DEEP-SUBMICROMETER MOSFETS
    LIU, ZH
    HU, CM
    HUANG, JH
    CHAN, TY
    JENG, MC
    KO, PK
    CHENG, YC
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (01) : 86 - 95
  • [5] RANDOM TELEGRAPH NOISE OF DEEP-SUBMICROMETER MOSFETS - COMMENT
    HUNG, KK
    KO, PK
    HU, CM
    CHENG, YC
    IEEE ELECTRON DEVICE LETTERS, 1990, 11 (08) : 353 - 353
  • [6] The Temperature Dependence of Mismatch in Deep-Submicrometer Bulk MOSFETs
    Andricciola, Pietro
    Tuinhout, Hans P.
    IEEE ELECTRON DEVICE LETTERS, 2009, 30 (06) : 690 - 692
  • [7] THRESHOLD VOLTAGE MODEL FOR DEEP-SUBMICROMETER MOSFETS - COMMENTS
    INIGUEZ, B
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1995, 42 (09) : 1712 - 1712
  • [8] PERFORMANCE AND RELIABILITY-DESIGN ISSUES FOR DEEP-SUBMICROMETER MOSFETS
    CHUNG, JE
    JENG, MC
    MOON, JE
    KO, PK
    HU, CM
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (03) : 545 - 554
  • [9] THE EFFECT OF DOPING PROFILE VARIATIONS UPON DEEP-SUBMICROMETER MOSFETS
    BREWS, JR
    ZHOU, ZY
    BUXO, J
    MICROELECTRONIC ENGINEERING, 1995, 28 (1-4) : 155 - 161
  • [10] Modelling the threshold voltage of deep-submicrometer fully depleted SOI MOSFETs
    Wang, HM
    Xi, XM
    Zhang, X
    Wang, YY
    ELECTRONICS LETTERS, 1997, 33 (16) : 1415 - 1416
12345