A MODEL FOR THE EVOLUTION OF IMPLANTED OXYGEN PROFILES IN SILICON

被引：36

作者：

MAYDELLONDRUSZ, EA ^{[1
]}

WILSON, IH ^{[1
]}

机构：

[1] UNIV SURREY,DEPT ELECTR & ELECT ENGN,GUILDFORD GU2 5XH,SURREY,ENGLAND

来源：

THIN SOLID FILMS | 1984年 / 114卷 / 04期

关键词：

D O I：

10.1016/0040-6090(84)90135-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：357 / 366

页数：10

共 20 条

[1] CALCULATION OF LENZ-JENSEN POTENTIAL USING 3RD ORDER APPROXIMATION [J].

BISTER, M ;

HAUTALA, M .

PHYSICS LETTERS A, 1978, 68 (01) :98-100

[2] ELASTIC AND INELASTIC ENERGY DEPOSITION DISTRIBUTIONS DURING ION-IMPLANTATION IN SOLIDS [J].

BURENKOV, AF ;

KOMAROV, FF ;

TEMKIN, MM .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1983, 69 (3-4) :165-177

[3]

Chu WK., 1978, BACKSCATTERING SPECT

[4]

GIBSON JF, 1970, PROJECTED RANGE STAT

[5] RUTHERFORD BACKSCATTERING ANALYSIS OF OXIDE LAYERS FORMED BY ION-IMPLANTATION INTO SINGLE-CRYSTAL SILICON [J].

GILL, SS ;

WILSON, IH .

THIN SOLID FILMS, 1978, 55 (03) :435-448

[6] TEM, AES AND XPS STUDIES OF SI LAYER ON BURIED SIO2 LAYER FORMED BY HIGH-DOSE OXYGEN ION-IMPLANTATION [J].

HAYASHI, T ;

MAEYAMA, S ;

YOSHII, S .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (06) :1111-1116

[7]

HAYASHI T, 1981, I PHYS C SER, V59, P559

[8]

HEMMENT PLF, 1984, VACUUM, V33, P203

[9]

Lindhard J., 1963, MAT FYS MEDD K DAN V, V33

[10]

Lindhard J., 1968, MAT FYS MEDD K DAN V, V36

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