Laser Scribing of SnO2: F Thin Films with a 532 nm Nd: YAG Pulsed Laser for Photovoltaic Applications

被引：1

作者：

Jimenez-Olarte, D. ^{[1
]}

Vigil-Galan, O. ^{[1
]}

Contreras-Puente, G. ^{[1
]}

机构：

[1] Escuela Super Fis & Matemat IPN, Edificio 9 UPALM, Mexico City 07738, DF, Mexico

来源：

ENERGY AND ENVIRONMENT FOCUS | 2013年 / 2卷 / 04期

关键词：

Laser Scribing; 532 nm Wavelength; Fluorine-Doped Tin Oxide; Thin Films; Energy Threshold;

D O I：

10.1166/eef.2013.1066

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Fluorine-doped tin oxide (SnO2: F) thin films are widely used in the photovoltaic industry as solar cell ohmic contact because of their optical and electrical characteristics. In the thin film production of photovoltaic modules, especially those produced in solar cells based onCdS/CdTe technology, a sequential laser patterning of each solar cell film, including SnO2: F, are necessary to divide and interconnect the cells in series. In this work the laser patterning of SnO2: F thin films from a soda-lime glass substrate via laser scribing is studied, using a 532 nm diode pumped solid state Nd: YAGlaser and the results are presented and discussed.

引用

页码：291 / 293

页数：3

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