BEHAVIOR OF LATTICE DEFECTS IN GAAS

被引:152
作者
BLANC, J
WEISBERG, LR
BUBE, RH
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关键词
D O I
10.1016/0022-3697(64)90083-6
中图分类号
O6 [化学];
学科分类号
0703 ;
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页码:225 / &
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[1]  
ABELES B, PRIVATE COMMUNICATIO
[2]   THERMAL, ELECTRICAL AND OPTICAL PROPERTIES OF (IN,GA)AS ALLOYS [J].
ABRAHAMS, MS ;
BRAUNSTEIN, R ;
ROSI, FD .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 10 (2-3) :204-210
[3]  
AUKERMAN LW, 1961, P INT C SEMICOND PHY, P946
[4]   ENERGY-LEVEL MODEL FOR HIGH-RESISTIVITY GALLIUM ARSENIDE [J].
BLANC, J ;
WEISBERG, LR .
NATURE, 1961, 192 (479) :155-&
[5]   PROPERTIES OF HIGH-RESISTIVITY GALLIUM ARSENIDE COMPENSATED WITH DIFFUSED COPPER [J].
BLANC, J ;
MACDONALD, HE ;
BUBE, RH .
JOURNAL OF APPLIED PHYSICS, 1961, 32 (09) :1666-&
[6]   EVIDENCE FOR EXISTENCE OF HIGH CONCENTRATIONS OF LATTICE DEFECTS IN GAAS [J].
BLANC, J ;
WEISBERG, LR ;
BUBE, RH .
PHYSICAL REVIEW LETTERS, 1962, 9 (06) :252-&
[7]   ELECTRICAL ACTIVITY OF COPPER IN GAAS [J].
BLANC, J ;
WEISBERG, LR .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (02) :221-&
[8]  
BUBE RH, 1962, PHYS REV, V128, P2062, DOI 10.1103/PhysRev.128.2062
[10]   TEMPERATURE DEPENDENCE OF PHOTO-HALL EFFECTS IN HIGH-RESISTIVITY GALLIUM ARSENIDE .2. 2-CARRIER EFFECTS [J].
BUBE, RH ;
MACDONALD, HE .
PHYSICAL REVIEW, 1962, 128 (05) :2071-&