BEHAVIOR OF LATTICE DEFECTS IN GAAS

被引：152

作者：

BLANC, J

WEISBERG, LR

BUBE, RH

机构：

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1964年 / 25卷 / 02期

关键词：

D O I：

10.1016/0022-3697(64)90083-6

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

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页码：225 / &

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[1] ABELES B, PRIVATE COMMUNICATIO
[2] THERMAL, ELECTRICAL AND OPTICAL PROPERTIES OF (IN,GA)AS ALLOYS
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[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 10 (2-3) : 204 - 210
[3] AUKERMAN LW, 1961, P INT C SEMICOND PHY, P946
[4] ENERGY-LEVEL MODEL FOR HIGH-RESISTIVITY GALLIUM ARSENIDE
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[J]. NATURE, 1961, 192 (479) : 155 - &
[5] PROPERTIES OF HIGH-RESISTIVITY GALLIUM ARSENIDE COMPENSATED WITH DIFFUSED COPPER
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BUBE, RH
[J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (09) : 1666 - &
[6] EVIDENCE FOR EXISTENCE OF HIGH CONCENTRATIONS OF LATTICE DEFECTS IN GAAS
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[J]. PHYSICAL REVIEW LETTERS, 1962, 9 (06) : 252 - &
[7] ELECTRICAL ACTIVITY OF COPPER IN GAAS
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WEISBERG, LR
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (02) : 221 - &
[8] BUBE RH, 1962, PHYS REV, V128, P2062, DOI 10.1103/PhysRev.128.2062
[9] PHOTOELECTRONIC ANALYSIS OF HIGH RESISTIVITY CRYSTALS - (A) GAAS, (B) SB2S3
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[J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (02) : 315 - 322
[10] TEMPERATURE DEPENDENCE OF PHOTO-HALL EFFECTS IN HIGH-RESISTIVITY GALLIUM ARSENIDE .2. 2-CARRIER EFFECTS
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[J]. PHYSICAL REVIEW, 1962, 128 (05): : 2071 - &

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