ORGANIC-ON-GAAS CONTACT BARRIER DIODES

被引：29
作者：
FORREST, SR
KAPLAN, ML
SCHMIDT, PH
PARSEY, JM
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 02期
关键词：
D O I：
10.1063/1.336157
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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收藏
页码：867 / 870
页数：4
相关论文
共 9 条
[1]   STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES [J].
CARD, HC ;
RHODERICK, EH .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (10) :1589-+
[2]   EVALUATION OF III-V-SEMICONDUCTOR WAFERS USING NONDESTRUCTIVE ORGANIC-ON-INORGANIC CONTACT BARRIERS [J].
FORREST, SR ;
KAPLAN, ML ;
SCHMIDT, PH ;
GATES, JV .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) :2892-2895
[3]   ORGANIC-ON-INORGANIC SEMICONDUCTOR CONTACT BARRIER DIODES .1. THEORY WITH APPLICATIONS TO ORGANIC THIN-FILMS AND PROTOTYPE DEVICES [J].
FORREST, SR ;
KAPLAN, ML ;
SCHMIDT, PH .
JOURNAL OF APPLIED PHYSICS, 1984, 55 (06) :1492-1507
[4]   ORGANIC-ON-INORGANIC SEMICONDUCTOR CONTACT BARRIER DIODES .2. DEPENDENCE ON ORGANIC FILM AND METAL CONTACT PROPERTIES [J].
FORREST, SR ;
KAPLAN, ML ;
SCHMIDT, PH .
JOURNAL OF APPLIED PHYSICS, 1984, 56 (02) :543-551
[5]   RELATIONSHIP BETWEEN THE CONDUCTION-BAND DISCONTINUITIES AND BAND-GAP DIFFERENCES OF INGAASP/INP HETEROJUNCTIONS [J].
FORREST, SR ;
SCHMIDT, PH ;
WILSON, RB ;
KAPLAN, ML .
APPLIED PHYSICS LETTERS, 1984, 45 (11) :1199-1201
[6]   ORGANIC-ON-INORGANIC SEMICONDUCTOR CONTACT BARRIER DEVICES [J].
FORREST, SR ;
KAPLAN, ML ;
SCHMIDT, PH ;
FELDMANN, WL ;
YANOWSKI, E .
APPLIED PHYSICS LETTERS, 1982, 41 (01) :90-93
[7]   NEW AND UNIFIED MODEL FOR SCHOTTKY-BARRIER AND III-V INSULATOR INTERFACE STATES FORMATION [J].
SPICER, WE ;
CHYE, PW ;
SKEATH, PR ;
SU, CY ;
LINDAU, I .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1422-1433
[8]   TRANSIENT CAPACITANCE ANALYSIS OF III-V SEMICONDUCTORS WITH ORGANIC-ON-INORGANIC SEMICONDUCTOR CONTACT BARRIER DIODES [J].
STAVOLA, M ;
PARSEY, JM ;
FORREST, SR ;
KAPLAN, ML ;
SCHMIDT, PH ;
YOUNG, MSS .
APPLIED PHYSICS LETTERS, 1985, 46 (05) :506-508
[9]  
SZE SM, 1981, PHYSICS SEMICONDUCTO
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