INSITU GROWTH OF SUPERCONDUCTING Y-BA-CU-O FILMS ON SI, SIO2, GAAS AND CU/AG BY THE HIGH-PRESSURE DC SPUTTERING PROCESS

被引：9
作者：
LIN, RJ
WU, PT
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1989年 / 28卷 / 12期
关键词：
D O I：
10.1143/JJAP.28.L2200
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：L2200 / L2203
页数：4
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