ELECTRICAL-PROPERTIES OF METAL-POLYMER (POLYSILOXANE)-SILICON STRUCTURES AND APPLICATION OF POLYSILOXANE TO PASSIVATION OF SEMICONDUCTOR-DEVICES

被引：34

作者：

MAISONNEUVE, M ^{[1
]}

SEGUI, Y ^{[1
]}

BUI, A ^{[1
]}

机构：

[1] UNIV PAUL SABATIER,LAB GEN ELECT,2 RUE CAMICHEL,31071 TOULOUSE,FRANCE

来源：

关键词：

D O I：

10.1016/0040-6090(76)90586-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：35 / 41

页数：7

共 10 条

[1] BRUHAT G, 1956, COURS PHYSIQUE GENER
[2] BUI A, 1972, 142ND NAT M EL SOC M
[3] CARCHANO H, 1973, THESIS U P SABATIER
[4] MAISONNEUVE M, 1975, THESIS U P SABATIER
[5] SI-SIO2 INTERFACE - ELECTRICAL PROPERTIES AS DETERMINED BY METAL-INSULATOR-SILICON CONDUCTANCE TECHNIQUE
NICOLLIA.EH
GOETZBER.A
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1967, 46 (06): : 1055 - +
[6] ELECTRICAL PROPERTIES OF METAL-POLYMER (POLYSTERENE) SILICON DEVICES
SANCHEZ, D
CARCHANO, M
BUI, A
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (03) : 1233 - 1238
[7] SANCHEZ D, 1972, THESIS U P SABATIER
[8] SEGUI Y, TO BE PUBLISHED
[9] CHEMICAL VAPOUR DEPOSITION PROMOTED BY RF DISCHARGE
STERLING, HF
SWANN, RCG
[J]. SOLID-STATE ELECTRONICS, 1965, 8 (08) : 653 - &
[10] RADIATION RESISTANCE OF AL2O3 MOS DEVICES
ZAININGER, KH
WAXMAN, AS
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (04) : 333 - +