ELECTRICAL-PROPERTIES OF METAL-POLYMER (POLYSILOXANE)-SILICON STRUCTURES AND APPLICATION OF POLYSILOXANE TO PASSIVATION OF SEMICONDUCTOR-DEVICES

被引：34

作者：

MAISONNEUVE, M ^{[1
]}

SEGUI, Y ^{[1
]}

BUI, A ^{[1
]}

机构：

[1] UNIV PAUL SABATIER,LAB GEN ELECT,2 RUE CAMICHEL,31071 TOULOUSE,FRANCE

来源：

THIN SOLID FILMS | 1976年 / 33卷 / 01期

关键词：

D O I：

10.1016/0040-6090(76)90586-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：35 / 41

页数：7

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[6] ELECTRICAL PROPERTIES OF METAL-POLYMER (POLYSTERENE) SILICON DEVICES [J].

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CARCHANO, M ;

BUI, A .

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[10] RADIATION RESISTANCE OF AL2O3 MOS DEVICES [J].

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