RAMAN-SPECTROSCOPY STUDY OF MICROSCOPIC STRAIN IN EPITAXIAL SI1-X-YGEXCY ALLOYS

被引：47
|
作者：
MENENDEZ, J
GOPALAN, P
SPENCER, GS
CAVE, N
STRANE, JW
机构：
[1] MOTOROLA INC,MAT CHARACTERIZAT LAB,MESA,AZ 85213
[2] CORNELL UNIV,DEPT MAT SCI & ENGN,ITHACA,NY 14853
来源：
APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 10期
关键词：
D O I：
10.1063/1.113843
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
This paper presents the result of a Raman scattering characterization of Si1-x-yGexCy layers. The main conclusion from this research is that the Si-Si bonds in strain-compensated Si1-x-yGexCy layers do not relax back to their pure Si configuration, even when the average lattice constant of the alloy is identical to that of pure Si.
引用
收藏
页码：1160 / 1162
页数：3
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