LASER EMISSION FROM N-TYPE GAAS EXCITED BY FAST ELECTRONS (77 DEGREES K 20-30 KV 0.2-2.0 A/CM2 DOPANT EFFECT EMITTED PHOTONS ] BAND GAP E)

被引:14
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CUSANO, DA
KINGSLEY, JD
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10.1063/1.1754181
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O59 [应用物理学];
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页码:91 / &
相关论文
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[1]  
BENOIT C, 1964, C INTERNATIONAL PHYS
[2]  
BENOIT C, 1964, SOLID STATE COMMUN, V2, P145
[3]   RADIATIVE RECOMBINATION FROM GAAS DIRECTLY EXCITED BY ELECTRON BEAMS [J].
CUSANO, DA .
SOLID STATE COMMUNICATIONS, 1964, 2 (11) :353-358
[4]   OPTICAL TRANSITIONS INVOLVING IMPURITIES IN SEMICONDUCTORS [J].
DUMKE, WP .
PHYSICAL REVIEW, 1963, 132 (05) :1998-&
[5]   ELECTRON-BEAM-PUMPED GAAS LASER (LIQUID HE E) [J].
HURWITZ, CE ;
KEYES, RJ .
APPLIED PHYSICS LETTERS, 1964, 5 (07) :139-&
[6]   RADIATIVE RECOMBINATION THROUGH IMPURITY LEVELS IN GAAS P-N JUNCTIONS [J].
LUCOVSKY, G ;
REPPER, CJ .
APPLIED PHYSICS LETTERS, 1963, 3 (05) :71-72
[7]   RECOMBINATION RADIATION IN GAAS BY OPTICAL AND ELECTRICAL INJECTION [J].
NATHAN, MI ;
BURNS, G .
APPLIED PHYSICS LETTERS, 1962, 1 (04) :89-90