ON SOME PROPERTIES OF ANTISITE DEFECTS IN NEUTRON-IRRADIATED GAAS

被引：0

作者：

WOSIK, J ^{[1
]}

PALCZEWSKA, M ^{[1
]}

KAMINSKA, M ^{[1
]}

机构：

[1] INST TECHNOL ELECTR MAT,WARSAW,POLAND

来源：

ACTA PHYSICA POLONICA A | 1986年 / 69卷 / 03期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：431 / 436

页数：6

共 13 条

[1] PHOTORESPONSE OF THE ASGA ANTISITE DEFECT IN AS-GROWN GAAS
BAEUMLER, M
KAUFMANN, U
WINDSCHEIF, J
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (08) : 781 - 783
[2] ELECTRON-PARAMAGNETIC RESONANCE DETERMINATION OF THE GENERATION RATE OF AS ANTISITES IN FAST-NEUTRON IRRADIATED GAAS
GOLTZENE, A
MEYER, B
SCHWAB, C
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (06) : 3117 - 3120
[3] HOFMANN DM, 1984, PHYS REV LETT, V53, P187
[4] INTRACENTER TRANSITIONS IN THE DOMINANT DEEP LEVEL (EL2) IN GAAS
KAMINSKA, M
SKOWRONSKI, M
LAGOWSKI, J
PARSEY, JM
GATOS, HC
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (03) : 302 - 304
[5] TECHNOLOGICAL AND PHYSICAL ASPECTS OF THE MAIN EL2 DEFECT IN GAAS
KAMINSKA, M
SKOWRONSKI, M
KUSZKO, W
LAGOWSKI, J
PARSEY, J
GATOS, HC
[J]. CZECHOSLOVAK JOURNAL OF PHYSICS, 1984, 34 (05) : 409 - 414
[6] KIMERLING JP, 1985, 13TH P INT C DEF SEM
[7] ORIGIN OF THE 0.82-EV ELECTRON TRAP IN GAAS AND ITS ANNIHILATION BY SHALLOW DONORS
LAGOWSKI, J
GATOS, HC
PARSEY, JM
WADA, K
KAMINSKA, M
WALUKIEWICZ, W
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (04) : 342 - 344
[8] OPTICAL ASSESSMENT OF THE MAIN ELECTRON TRAP IN BULK SEMI-INSULATING GAAS
MARTIN, GM
[J]. APPLIED PHYSICS LETTERS, 1981, 39 (09) : 747 - 748
[9] VARIATION OF THE MIDGAP ELECTRON TRAPS (EL2) IN LIQUID ENCAPSULATED CZOCHRALSKI GAAS
TANIGUCHI, M
IKOMA, T
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) : 6448 - 6451
[10] SPECTRAL DISTRIBUTIONS OF PHOTOQUENCHING RATE AND MULTIMETASTABLE STATES FOR MIDGAP ELECTRON TRAPS (EL2 FAMILY) IN GAAS
TANIGUCHI, M
IKOMA, T
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (01) : 69 - 71

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