MILLIMETER-WAVE LOW-NOISE HIGH ELECTRON-MOBILITY TRANSISTORS

被引:37
作者
CHAO, PC
PALMATEER, SC
SMITH, PM
MISHRA, UK
DUH, KHG
HWANG, JCM
机构
关键词
D O I
10.1109/EDL.1985.26219
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:531 / 533
页数:3
相关论文
共 14 条
[1]  
BERENZ JJ, 1984, JUN IEEE MTTS, P83
[2]   ELECTRON-BEAM FABRICATION OF GAAS LOW-NOISE MESFETS USING A NEW TRILAYER RESIST TECHNIQUE [J].
CHAO, PC ;
SMITH, PM ;
PALMATEER, SC ;
HWANG, JCM .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (06) :1042-1046
[3]  
CHAO PC, 1985, 43RD ANN DEV RES C B
[4]  
CIRILLO NC, 1985, 43RD ANN DEV RES C B
[5]   A HIGH ASPECT RATIO DESIGN APPROACH TO MILLIMETER-WAVE HEMT STRUCTURES [J].
DAS, MB .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (01) :11-17
[6]  
DELESCLUSE P, 1985, 21TH WOCSMMAD
[7]   LOW-NOISE HIGH ELECTRON-MOBILITY TRANSISTORS FOR MONOLITHIC MICROWAVE INTEGRATED-CIRCUITS [J].
GUPTA, AK ;
SOVERO, EA ;
PIERSON, RL ;
STEIN, RD ;
CHEN, RT ;
MILLER, DL ;
HIGGINS, JA .
IEEE ELECTRON DEVICE LETTERS, 1985, 6 (02) :81-82
[8]  
HIKOSAKA K, 1985, 43RD ANN DEV RES C B
[9]   MICROWAVE PERFORMANCE OF 0.25-MU-M GATE LENGTH HIGH ELECTRON-MOBILITY TRANSISTORS [J].
MISHRA, UK ;
PALMATEER, SC ;
CHAO, PC ;
SMITH, PM ;
HWANG, JCM .
IEEE ELECTRON DEVICE LETTERS, 1985, 6 (03) :142-145
[10]  
OHATA K, 1984, 15TH P C SOL STAT DE, P111