HIGH-FIELD TRANSPORT IN GAAS, INP AND INAS

被引:224
作者
BRENNAN, K [1 ]
HESS, K [1 ]
机构
[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
关键词
D O I
10.1016/0038-1101(84)90168-0
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:347 / 357
页数:11
相关论文
共 45 条
[31]  
PINES D, 1962, MANY BODY PROBLEM FR
[32]  
PINES D, 1977, ELEMENTARY EXCITATIO, P277
[34]   TRANSPORT PROPERTIES OF GAAS [J].
RUCH, JG ;
KINO, GS .
PHYSICAL REVIEW, 1968, 174 (03) :921-+
[35]   ULTRAFAST PHENOMENA IN SEMICONDUCTOR-DEVICES [J].
SHANK, CV ;
AUSTON, DH .
SCIENCE, 1982, 215 (4534) :797-801
[36]   BAND-STRUCTURE-DEPENDENT TRANSPORT AND IMPACT IONIZATION IN GAAS [J].
SHICHIJO, H ;
HESS, K .
PHYSICAL REVIEW B, 1981, 23 (08) :4197-4207
[37]   PROBLEMS RELATED TO P-N JUNCTIONS IN SILICON [J].
SHOCKLEY, W .
SOLID-STATE ELECTRONICS, 1961, 2 (01) :35-+
[38]   NEAR BALLISTIC ELECTRON-TRANSPORT IN GAAS DEVICES AT 77-DEGREES-K [J].
SHUR, MS ;
EASTMAN, LF .
SOLID-STATE ELECTRONICS, 1981, 24 (01) :11-18
[39]  
STILLMAN GE, 1977, SEMICONDUCTORS SEMIM, V12
[40]  
SZE SM, 1982, PHYSICS SEMICONDUCTO