HIGH-FIELD TRANSPORT IN GAAS, INP AND INAS

被引:224
作者
BRENNAN, K [1 ]
HESS, K [1 ]
机构
[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
关键词
D O I
10.1016/0038-1101(84)90168-0
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:347 / 357
页数:11
相关论文
共 45 条
[11]  
Frey J., 1980, International Electron Devices Meeting. Technical Digest, P613
[12]  
GHIS A, 1983, J APPL PHYS, V54, P241
[13]  
HAUSER R, UNPUB ELECTRON DEV L
[15]   DEFORMATION POTENTIALS OF BULK SEMICONDUCTORS [J].
HESS, K ;
DOW, JD .
SOLID STATE COMMUNICATIONS, 1981, 40 (04) :371-373
[16]   ULTIMATE LIMITS OF CCD PERFORMANCE IMPOSED BY HOT-ELECTRON EFFECTS [J].
HESS, K ;
SAH, CT .
SOLID-STATE ELECTRONICS, 1979, 22 (12) :1025-1033
[17]   BALLISTIC ELECTRON-TRANSPORT IN SEMICONDUCTORS [J].
HESS, K .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (08) :937-940
[18]   SIMULATION OF HIGH-FIELD TRANSPORT IN GAAS USING A MONTE-CARLO METHOD AND PSEUDOPOTENTIAL BAND STRUCTURES - BAND-STRUCTURE DEPENDENT TRANSPORT AND IMPACT IONIZATION IN GAAS - REPLY [J].
HESS, K ;
TANG, JY ;
BRENNAN, K ;
SHICHIJO, H ;
STILLMAN, GE .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) :3327-3329
[19]  
HESS K, 1980, PHYSICS NONLINEAR TR
[20]   ELECTRON-DRIFT VELOCITY IN N-GAAS AT HIGH ELECTRIC-FIELDS [J].
HOUSTON, PA ;
EVANS, AGR .
SOLID-STATE ELECTRONICS, 1977, 20 (03) :197-204